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Dr Alessandro Rossi

Dr Alessandro Rossi

Marie Curie Research Fellow &

St Edmund's College Research Fellow


Office Phone: +44 (0)1223337497

Biography:

Alessandro joined the Microelectronics Group at the Department of Physics as a Marie Curie Research Fellow in 2016. His research interests span from quantum computing to quantum electrical metrology in semiconductor systems, as well as development of hybrid semiconductor/superconductor technologies.
Alessandro studied Electrical Engineering at the University of Naples (Italy) where he received his BSc and MSc summa cum laude in 2001 and 2003, respectively.
After working for two years as a consultant at Altran Ltd (Italy), he then moved to the UK to engage in his doctoral studies in Physics at the University of Cambridge. Alessandro graduated in 2011 with a dissertation on microwave-assisted charge transport in single-electron transistors.
Following the award of his PhD, Alessandro worked at the Hitachi Cambridge Laboratory (UK) as a research scientist in the area of silicon nanoelectronics.
From 2012 until 2015, he worked at the University of New South Wales (Australia) as a post-doctoral research assistant in the group of Prof. Andrew Dzurak. In Australia, Alessandro focussed on the development of silicon-based single-electron devices to generate electric currents with record accuracy. For this work, he was awarded Australia’s National Measurement Institute Prize for excellence in measurement research.

Alessandro has personally raised competitive early career grants/scholarships from British, European and Australian funding agencies for a combined amount of about £500,000.

Research Interests

Semiconductor physics, quantum technologies, electrical metrology.

Key Publications

R. Zhao, A. Rossi, S.P. Giblin, J.D. Fletcher, F.E. Hudson, M. Mottonen, M. Kataoka, A.S. Dzurak 'Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping' Physical Review Applied 2017, 8, 044021.

A. Rossi, R. Zhao, A.S. Dzurak, M.F. Gonzalez-Zalba ‘Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor’, Applied Physics Letters 2017, 110, 212101.

T. Tanttu, A. Rossi, K. Y. Tan, A. Makinen, K. W. Chan, A.S. Dzurak, M. Möttönen ‘Three-waveform bidirectional pumping of single electrons with a silicon quantum dot’, Scientific Reports 2016, 6, 36381. 

A. Rossi, T. Tanttu, K.Y. Tan, I. Iisakka, R. Zhao, K.W. Chan, G.C. Tettamanzi, S. Rogge, A.S. Dzurak, and M. Möttönen 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters 2014, 14, 3405. 

C.H. Yang, A. Rossi, R. Ruskov, N.S. Lai, F.A. Mohiyaddin, S. Lee, C. Tahan, G. Klimeck, A. Morello, and A.S. Dzurak 'Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting', Nature Communications 2013, 4, 2069. 

 

Other Publications

J.K. Gamble, P. Harvey-Collard, N.T. Jacobson, A.D. Baczewski, E. Nielsen, L. Maurer, I. Montano, M. Rudolph, M. S. Carroll, C.H. Yang, A. Rossi, A.S. Dzurak, R.P. Muller 'Valley splitting of single-electron Si MOS quantum dots', Applied Physics Letters 2016, 109, 253101.

T. Tanttu, A. Rossi, K. Y. Tan, K. Huhtinen, K. W. Chan, M. Möttönen, A.S. Dzurak 'Electron counting in a silicon single-electron pump’, New Journal of Physics 2015, 17, 103030. 

W.E. Purches, A. Rossi, R. Zhao, S. Kafanov, T.L. Duty, A.S. Dzurak, S. Rogge, G.C. Tettamanzi 'A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures', Applied Physics Letters 2015, 107, 063503.

A. Rossi, T. Tanttu, F.E. Hudson, Y. Sun, M. Möttönen, A.S. Dzurak 'Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping', Journal of Viualized Experiments. 2015, 100, 52852. 

T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, and D.A. Williams 'GHz photon-activated hopping between localized states in a silicon quantum dot', New Journal of Physics 2014, 16, 013016.

C.H. Yang, A. Rossi, N.S. Lai, R. Leon, W.H. Lim, and A.S. Dzurak 'Charge state hysteresis in semiconductor quantum dots', Applied Physics Letters 2014, 105, 183505. 

L. Jiang, C. H. Yang, Z. Pan, A. Rossi, A. S. Dzurak, and D. Culcer 'Coulomb interaction and valley-orbit coupling in Si quantum dots', Physical Review B 2013, 88, 085311.

C.H. Yang, W.H. Lim, N.S. Lai, A. Rossi, A. Morello, and A.S. Dzurak 'Orbital and valley state spectra of a few-electron silicon quantum dot', Physical Review B 2012, 86, 115319. 

T. Ferrus, A. Rossi, W. Lin, D.A. Williams, T. Kodera, and S. Oda  'Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots', AIP Advances 2012, 2, 22114. 

A. Rossi, T. Ferrus, and D.A. Williams 'Electron temperature in electrically isolated Si double quantum dots', Applied Physics Letters 2012, 100, 133503. 

M. Erfani, D.G. Hasko, A. Rossi, W.S. Cho, and J. Choi 'Microwave driven arbitrary coupling between trapped charge resonances in a silicon single electron transistor', Applied Physics Letters 2011, 99, 192108. 

T. Ferrus, A. Rossi, M. Tanner, G.J. Podd, P. Chapman, and D.A. Williams 'Detection of charge motion in a non-metallic silicon isolated double quantum dot', New Journal of Physics 2011, 13, 103012. 

A. Rossi, T. Ferrus, W. Lin, T. Kodera, D.A. Williams, and S. Oda  'Detection of variable tunneling rates in silicon quantum dots', Applied Physics Letters 2011, 98, 133506. 

A. Rossi, T. Ferrus, G.J. Podd, and D.A. Williams 'Charge detection in phosphorus-doped silicon double quantum dots', Applied Physics Letters 2010, 97, 223506. 

A. Rossi, and D.G. Hasko 'Microwave-assisted transport via localized states in degenerately doped Si single electron transistors', Journal of Applied Physics 2010, 108, 034509. 

N. Nenadovic, V. d'Alessandro, F. Tamigi, A. Rossi, A. Griffo, L.K. Nanver, J.W. Slotboom 'Thermal instability in two-finger bipolar transistors', Proceedings of IEEE ESSDERC 2003, 203-206.