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The field of spin electronics or "spintronics" aims to understand how one can make use of the spin degree of freedom of electrons in order to realize electronic devices and functionalities which cannot be realized by making use of the electron's charge degree of freedom alone.

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Electron spins in silicon

We aim to control single electron spins in silicon where a long spin lifetime is expected due to the low spin-orbit coupling and also a low density of nuclear spins. In our research, the electrons are either confined in the atomic-like potential of a single dopant or in a quantum dot.

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Our Posters are the Best

Dec 13, 2013

For the third consecutive year a member of our group wins the "Best Specific Poster" award.

Best contributed research presentation

Nov 22, 2013

Best presentation of research in superconducting devices and applications.

Institute of Physics Prize

Aug 19, 2013

Best presentation of graduate research in Superconductivity and Quantum Fluids.

Best Poster

Dec 03, 2012

Best "Specific Poster" award at the Cavendish Graduate Student Conference.

JST-PRESTO fellowship

Oct 02, 2012

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Current-induced torques in ultrathin Co/Pt bilayers were investigated. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the sum of the field-like torque and Oersted torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers.

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A metallic double dot is measured with radio frequency reflectometry. Electron counting experiments are performed by monitoring the impedance, demonstrating operation of a single electron ammeter without the need for external charge detection.

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Here, we report the observation of an antidamping spin–orbit torque that stems from the Berry curvature, in analogy to the origin of the intrinsic spin Hall effect. We expect the torque to be of comparable strength to the spin-Hall-effect-driven antidamping torque in ferromagnets interfaced with paramagnets with strong intrinsic spin Hall effect.

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